Stack packaging structure for an image sensor

ABSTRACT

According to an aspect, a stack packaging structure includes a substrate, a semiconductor device coupled to a surface of the substrate, an image sensor device coupled to the semiconductor device such that the semiconductor device is disposed between the surface of the substrate and the image sensor device, at least one bond wire connected to the image sensor device and the surface of the substrate, a inner molding disposed between the surface of the substrate and the image sensor device, where the semiconductor device is encapsulated within the inner molding, and an outer molding disposed on the surface of the substrate, where the at least one bond wire is encapsulated within the outer molding.

TECHNICAL FIELD

This description relates to a stack packaging structure for an imagesensor.

BACKGROUND

Integrated circuits (ICs) may require packaging to enclose chips andprovide protection during shipping, assembly and subsequent use. In somepackaging structures, IC devices are assembled on the backend of theprinted circuit board (PCB) with relatively long traces interconnectedwith the image sensor.

SUMMARY

According to an aspect, a stack packaging structure includes asubstrate, a semiconductor device coupled to a surface of the substrate,an image sensor device coupled to the semiconductor device such that thesemiconductor device is disposed between the surface of the substrateand the image sensor device, at least one bond wire connected to theimage sensor device and the surface of the substrate, a inner moldingdisposed between the surface of the substrate and the image sensordevice, where the semiconductor device is encapsulated within the innermolding, and an outer molding disposed on the surface of the substrate,where the at least one bond wire is encapsulated within the outermolding.

According to some aspects, the stack packaging structure may include oneor more of the following features (or any combination thereof). Theouter molding may include a material that is different than a materialof the inner molding. The outer molding may include a material that isthe same as a material of the inner molding. The semiconductor devicemay be coupled to the surface of the substrate using bump members, wherethe bump members is at least partially disposed within an under-fillmaterial, and the inner molding has a material that is the same as theunder-fill material. The inner molding may include an epoxy material.The stack packaging structure may include an adhesive layer disposedbetween the image sensor device and the semiconductor device. Thesemiconductor device may be a first semiconductor device, and the stackpackaging structure further includes a second semiconductor devicecoupled to the surface of the substrate, where the second semiconductordevice is encapsulated within the inner molding. The stack packagingstructure may include a third semiconductor device coupled to thesurface of the substrate, where the third semiconductor device isencapsulated within the inner molding. The stack packaging structure mayinclude a transparent member coupled to the image sensor device suchthat an empty space exists between an active region of the image sensordevice and the transparent member. The outer molding may extend along anedge of the inner molding, an edge of the image sensor device, and anedge of the transparent member. The semiconductor device may include animage signal processor (ISP) integrated circuit (IC) die. The surface ofthe substrate may be a first surface, and the substrate includes asecond surface opposite to the first surface. The stack packagingstructure may include a plurality of conductive components coupled tothe second surface of the substrate, where the plurality of conductivecomponents is configured to connect to an external device.

According to an aspect, a stack packaging structure includes asubstrate, a first semiconductor device coupled to a surface of thesubstrate, a second semiconductor device coupled to the surface of thesubstrate, an image sensor device disposed on the first semiconductordevice and the second semiconductor device, an inner molding disposedbetween the surface of the substrate and the image sensor device, wherethe first semiconductor device and the second semiconductor device areencapsulated within the inner molding, and an outer molding disposed onthe surface of the substrate, where the outer molding extends along anedge of the inner molding and an edge of the image sensor device.

According to some aspects, the stack packaging structure may include oneor more of the above and/or below features (or any combination thereof).The first semiconductor device may be coupled to the surface of thesubstrate using bump members, where the bump members are at leastpartially disposed within an under-fill material, and the inner moldinghas a material that is the same as the under-fill material. The innermolding may include an epoxy material. The second semiconductor devicemay include a driver integrated circuit (IC) die or a memory IC die. Thestack packaging structure may include at least one bond wire connectedto the image sensor device and the surface of the substrate. The stackpackaging structure may include a third semiconductor device coupled tothe surface of the substrate, where the third semiconductor device isencapsulated within the inner molding.

According to an aspect, a method of assembling a stack packagingstructure includes coupling a semiconductor device to a substrate in aflip-chip configuration, applying an inner molding to cover thesemiconductor device, coupling an image sensor device to the innermolding, connecting at least one bond wire to the image sensor deviceand the substrate, coupling a transparent member to the image sensordevice, and applying an outer molding to cover the at least one bondwire and an edge portion of the transparent member.

According to an aspect, a method of assembling a stack packagingstructure includes coupling a semiconductor device to a substrate in aflip-chip configuration, coupling an image sensor device to thesemiconductor device, applying an inner molding between the substrateand the image sensor device, connecting at least one bond wire to theimage sensor device and the substrate, coupling a transparent member tothe image sensor device, and applying an outer molding to cover the atleast one bond wire and an edge portion of the transparent member.

The details of one or more implementations are set forth in theaccompanying drawings and the description below. Other features will beapparent from the description and drawings, and from the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A through 1C illustrate stack packaging structures for imagesensor devices according to various aspects.

FIGS. 2A and 2B illustrate stack packaging structures for image sensordevices according to various aspects.

FIG. 3 illustrates a stack packaging structure for an image sensordevice according to another aspect.

FIG. 4 illustrates a stack packaging structure for an image sensordevice according to another aspect.

FIGS. 5 through 8 illustrate flowcharts depicting example operations forassembling stack packaging structures according to various aspects.

DETAILED DESCRIPTION

The present disclosure relates to a stack packaging structure for animage sensor device that may reduce the size of the overall packagewhile increasing the number devices included in this structure, reduce(or eliminate) noise on the image signal transferred from the imagesensor device to the devices, and/or reduce the cost for manufacturingsuch packages. In some examples, the stack packaging structure mayinclude an inner molding that encapsulates one or more devices coupledto a substrate, and an outer molding that encapsulates the innermolding, the image sensor device, and a transparent member coupled tothe image sensor device. In some examples, the one or more devicesis/are coupled to the substrate in a flip-chip configuration with bumpmembers (e.g., bumps, pillars, etc.), and an under-fill material is usedbetween the devices and the substrate. In some examples, the innermolding includes an under-fill material that is the same or similar tothe under-fill material used in the flip-chip configuration. In someexamples, the outer molding is an epoxy-based molding or encapsulationthat protects the image sensor device. In some examples, the innermolding includes an epoxy material that is the same or similar to theouter molding. In some examples, the dual molding structure may increasethe durability of the packaging structure and reduce (or prevent)moisture from interfering with the operation of the image sensor devicesand other devices included within the packaging structure.

FIGS. 1A-1C illustrate stack packaging structures according to variousaspects. FIG. 1A illustrates a stack packaging structure 100 for animage sensor device 102 according to an aspect. The image sensor device102 includes an image sensor die having, or corresponds with, an arrayof pixel elements configured to convert electromagnetic radiation (e.g.,light) to electrical signals. In some examples, the image sensor device102 includes a complementary metal-oxide semiconductor (CMOS) imagesensor. The image sensor device 102 includes a first surface 124 and asecond surface 126. The stack packaging structure 100 includes atransparent member 108 coupled to the image sensor device 102 such thatthe transparent member 108 is positioned over (and spaced apart from)the first surface 124 of the image sensor device 102 in a direction A1.The transparent member 108 includes an optically transparent materialthat allows electromagnetic radiation (e.g., light (e.g., visiblelight)) to pass through (e.g., pass through the entirety of thematerial). In some examples, the transparent member 108 includes acover. In some examples, the transparent member 108 includes a lid. Insome examples, the transparent member 108 includes one or more organicmaterials and/or one or more inorganic materials. In some examples, thetransparent member 108 includes a glass material. In some examples, thetransparent member 108 includes one or more layers of transparentmaterial.

In some examples, the stack packaging structure 100 includes dam members105 that position the transparent member 108 away from the first surface124 of the image sensor device 102. For example, the dam members 105 arecoupled to the transparent member 108 and to the first surface 124 ofthe image sensor device 102, where a portion of the first surface 124 ofthe image sensor device 102 is disposed between adjacent dam members105. In some examples, the dam members 105 include an adhesive material.In some examples, the dam members 105 include an epoxy resin. In someexamples, the dam members 105 include a polymer-based material.

The stack packaging structure 100 includes a substrate 104. Thesubstrate 104 includes a printed circuit board (PCB) substrate. In someexamples, the substrate 104 includes a dielectric material. In someexamples, the substrate 104 includes a single layer of PCB basematerial. In some examples, the substrate 104 includes multiple layersof PCB base material. The substrate 104 includes a first surface 116 anda second surface 118 that is disposed opposite to the first surface 116.In some examples, the substrate 104 includes one or more conductivelayer portions (e.g., electrical traces) disposed on the first surface116 of the substrate 104, and/or one or more conductive layer portions(e.g., electrical traces) disposed on the second surface 118 of thesubstrate 104. In some examples, the electrical traces may be configuredto and/or used to transmit signals to and/or from devices (e.g.,electronic devices included in a semiconductor region (e.g., epitaxiallayer and/or semiconductor substrate)) connected to the electricaltraces. In some examples, the electrical traces can include conductivetraces (e.g., metallic traces) such as copper traces, aluminum traces,and/or so forth. The first surface 116 of the substrate 104 is disposedin a plane A4. In some examples, the second surface 118 is disposed inparallel with the first surface 116. A direction A1 is alignedperpendicular to the plane A4, and a direction A2 is perpendicular tothe direction A1. A direction A3 into the page (shown as a dot) isaligned parallel to the plane A4 and is orthogonal to directions A1 andA2. The directions A1, A2, and A3, and plane A4, are used throughoutseveral of the various views of the implementations described throughoutthe figures for simplicity.

The stack packaging structure 100 includes a first device 110 coupled tothe first surface 116 of the substrate 104. In some examples, the firstdevice 110 is coupled to the first surface 116 of the substrate 104 in aflip-chip configuration. In some examples, the first device 110 iscoupled to the first surface 116 of the substrate 104 by surface mounttechnology (SMT) (e.g., interconnection by solder joint). In someexamples, the first device 110 is coupled to the first surface 116 ofthe substrate 104 using one or more bump members (e.g., copper pillarswith solder, gold plated bumps, solder bumps, and/or gold stud bumps,etc.). In some examples, an under-fill material is disposed the gapbetween the first device 110 and the first surface 116 of the substrate,where the under-fill material encapsulates the bump members. In someexamples, the under-fill material is a liquid epoxy resin that isapplied to the gap, and then a thermal curing is performed to cure theunder-fill material. In some examples, the image sensor device 102 has afirst dimension (e.g., length or width) that is defined by a distancebetween edges 141 of the image sensor device 102. In some examples, thefirst device 110 has a second dimension (e.g., length or width) that isdefined by a distance between edges 111 of the first device 110. In someexamples, the second dimension is less than the first dimension.

The first device 110 may include an integrated circuit die. In someexamples, the first device 110 includes a semiconductor device. In someexamples, the first device 110 includes an image signal processor (ISP)integrated circuit (IC) die. In some examples, the first device 110includes a memory IC die. In some examples, the first device 110includes one or more passive components (e.g., resistor, inductor,and/or capacitor (RLC) circuit). In some examples, the first device 110includes a driver IC die. The image sensor device 102 is coupled to thefirst device 110. In some examples, an adhesive layer (e.g., a dieattach film) is disposed between the surface 134 of the image sensordevice 102 and the first device 110. In some examples, the image sensordevice 102 is communicatively connected to the substrate 104 using atleast one bond wire 121. The at least one bond wire 121 may be connectedto the first surface 124 of the image sensor device 102 and the firstsurface 116 of the substrate 104. The at least one bond wire 121 may bea conductive (e.g., metal) wire such as aluminum, copper, or gold, orany combination thereof, for example.

The stack packaging structure 100 may include a plurality of conductivecomponents 151 coupled to the second surface 118 of the substrate 104.In some examples, the conductive components 151 are surface-mountpackaging elements. In some examples, the conductive components 151include solder balls. The conductive components 151 are components usedto connect to an external device (e.g., a ball grid array (BGA) device).However, the conductive components 151 may include other types ofsurface-mount packaging elements.

The stack packaging structure 100 includes an inner molding 113 disposedbetween the image sensor device 102 and the substrate 104. For example,the inner molding 113 may be disposed between the second surface 126 ofthe image sensor device 102 and the first surface 116 of the substrate104. The inner molding 113 may encapsulate the first device 110. Theinner molding 113 may extend along an edge 111 of the first device 110in the direction A1 between the second surface 126 of the image sensordevice 102 and the first surface 116 of the substrate 104. The innermolding 113 may extend to a molding edge 131 along a direction A2. Themolding edge 131 may define a location of where the inner molding 113ends. In some examples, the molding edge 131 may be disposed at alocation between an edge 141 of the image sensor device 102 and an edge153 of the substrate 104. In some examples, the molding edge 131 may bedisposed at a location between the edge 141 of the image sensor device102 and the edge 111 of the first device 110. In some examples, themolding edge 131 is substantially aligned with the edge 141 of the imagesensor device 102. In some examples, the molding edge 131 is linear. Insome examples, the molding edge 131 includes one or more bent or curvedportions.

In some examples, the inner molding 113 includes an under-fill material.In some examples, the under-fill material includes an epoxy (e.g., aliquid epoxy that is subsequently cured), a liquid molding material(that is subsequently cured), and/or a granular molding compound. Insome examples, the under-fill material is the same or similar to theunder-fill material that is used under the first device 110. In someexamples, the inner molding 113 includes a liquid epoxy resin that isapplied between the image sensor device 102 and the substrate 104, andthen the liquid epoxy resin cured via a thermal curing process. In someexamples, the inner molding 113 includes a molding material that is thesame or similar to the molding material used for the outer molding 115.In some examples, the inner molding 113 includes one or more types ofmaterial (e.g., in a molding compound if including multiple types ofmaterials) such as a metal, a plastic, a resin, an epoxy, a phenolichardener, a silica material, a pigment, a glass, a ceramic casing,and/or so forth.

The stack packaging structure 100 includes the outer molding 115 thatencapsulates the at least one bond wire 121. The outer molding 115 maybe disposed on the first surface 116 of the substrate 104. The outermolding 115 may extend along the molding edge 131 of the inner molding113, the edge 141 of image sensor device 102, the dam members 105,and/or an edge 161 of the transparent member 108. In some examples, theouter molding 115 is disposed on a portion of the first surface 124 ofthe image sensor device 102. The outer molding 115 may extend from oneor more of the edges (e.g., 131, 141, 161) in the direction A2. In someexamples, the outer molding 115 defines a first molding edge 123 thatdefines an end of the outer molding 115 in the direction A2. In someexamples, the first molding edge 123 is linear. In some examples, thefirst molding edge 123 includes one or more angled or curved portions.In some examples, at least a portion of the first molding edge 123 (orall of the first molding edge 123) is aligned with the direction A1. Insome examples, the first molding edge 123 is disposed at an angle withrespect to the direction A2. In some examples, at least a portion of thefirst molding edge 123 (or all of the first molding edge 123) is alignedwith the edge 153 of the substrate 104. In some examples, the firstmolding edge 123 is disposed at a location between the edge 153 of thesubstrate and the molding edge 131 of the inner molding 113.

The outer molding 115 may define a second molding edge 125 defining anend of the outer molding 115 in the direction A1. The second moldingedge 125 may extend from the first molding edge 123 to the edge 161 ofthe transparent member 108. In some examples, the second molding edge125 is disposed at a non-zero angle with respect to the first moldingedge 123 such that the outer molding 115 is tapered from a surface 128of the transparent member 108. In some examples, the second molding edge125 is disposed perpendicular to the first molding edge 123. In someexamples, the second molding edge 125 is linear. In some examples, thesecond molding edge 125 includes one or more bent or cured portions.

The outer molding 115 includes one or more types of material (e.g., in amolding compound if including multiple types of materials) such as ametal, a plastic, a resin, an epoxy, a phenolic hardener, a silicamaterial, a pigment, a glass, a ceramic casing, and/or so forth. In someexamples, the outer molding 115 includes one or more materials differentthan a material of the inner molding 113. In some examples, the outermolding 115 includes one or more materials that is/are the same as thematerial of the inner molding 113.

FIG. 1B illustrates a stack packaging structure 150 for the image sensordevice 102 according to another aspect. The stack packaging structure150 may include any of the features discussed with reference to FIG. 1B.The stack packaging structure 150 includes two devices, e.g., the firstdevice 110, and a second device 112. In some examples, the second device112 includes a semiconductor device. In some examples, the second device112 includes an IC die. In some examples, the second device 112 includesa memory IC die. In some examples, the second device 112 includes adriver IC die. In some examples, the second device 112 includes one ormore passive RLC components. In some examples, the second device 112includes an ISP IC die. In some examples, the first device 110 is an ISPIC die, and the second device 112 is a driver IC die or a memory IC die.

The first device 110 is coupled to the first surface 116 of thesubstrate 104, and the second device 112 is coupled to the first surface116 of the substrate 104. In some examples, the second device 112 iscoupled to the first surface 116 of the substrate 104 in a flip-chipconfiguration. In some examples, the second device 112 is coupled to thefirst surface 116 of the substrate 104 using one or more bump members(e.g., bumps, pillars, etc.). In some examples, an under-fill materialis disposed between the second device 112 and the first surface 116 ofthe substrate, where the under-fill material encapsulates the bumpmembers. In some examples, the second device 112 has a third dimension(e.g., length or width) that is defined by a distance between a firstedge 109-1 and a second edge 109-2 of the second device 112. In someexamples, the third dimension is less than the first dimension of theimage sensor device 102. The image sensor device 102 is coupled to thefirst device 110 and the second device 112. In some examples, anadhesive layer (e.g., a die attach film) is disposed between the imagesensor device 102 and the first and second devices 110, 112.

The inner molding 113 may encapsulate the first device 110 and thesecond device 112. For example, the inner molding 113 may be disposedbetween the image sensor device 102 and the substrate 104. The innermolding 113 may extend from a first edge 111-1 of the first device 110to a first molding edge 131-1. The inner molding 113 may extend betweena second edge 111-2 of the first device 110 to a first edge 109-1 of thesecond device 112. The inner molding 113 may extend from a second edge109-2 to a second molding edge 131-2 of the inner molding 113. The firstmolding edge 131-1 and the second molding edge 131-2 may include any ofthe features explained with reference to the molding edge 131 of FIG.1A.

FIG. 1C illustrates a stack packaging structure 180 for the image sensordevice 102 according to another aspect. The stack packaging structure180 may include any of the features discussed with reference to FIGS. 1Aand/or 1B. The stack packaging structure 180 includes three devices,e.g., the first device 110, the second device 112, and a third device114. In some examples, the third device 114 includes a semiconductordevice. In some examples, the third device 114 includes an IC die. Insome examples, the third device 114 includes a memory IC die. In someexamples, the third device 114 includes a driver IC die. In someexamples, the third device 114 includes an ISP IC die. In some examples,the third device 114 includes one or more passive RLC components. Insome examples, the first device 110 is an ISP IC die, and the seconddevice 112 is a driver IC die, and the third device 114 or a memory ICdie.

The first device 110 is coupled to the first surface 116 of thesubstrate 104, the second device 112 is coupled to the first surface 116of the substrate 104, and the third device 114 is coupled to the firstsurface 116 of the substrate 104. In some examples, the third device 114is coupled to the first surface 116 of the substrate 104 in a flip-chipconfiguration. In some examples, the third device 114 is coupled to thefirst surface 116 of the substrate 104 using one or more bump members(e.g., bumps, pillars, etc.). In some examples, an under-fill materialis disposed between the third device 114 and the first surface 116 ofthe substrate 104, where the under-fill material encapsulates the bumpmembers. In some examples, the third device 114 has a fourth dimension(e.g., length or width) that is defined by a distance between a firstedge 107-1 and a second edge 107-2 of the third device 114. In someexamples, the fourth dimension is less than the first dimension of theimage sensor device 102.

The image sensor device 102 is disposed on a surface of the first device110, a surface of the second device 112, and a surface of the thirddevice 114. In some examples, an adhesive layer (e.g., a die attachfilm) is disposed between the image sensor device 102 and the firstthrough third devices 110, 112, 114.

The inner molding 113 may encapsulate the first device 110, the seconddevice 112, and the third device 114. For example, the inner molding 113may be disposed between the image sensor device 102 and the substrate104. The inner molding 113 may extend from the first edge 111-1 of thefirst device 110 to the first molding edge 131-1. The inner molding 113may extend between the second edge 111-2 of the first device 110 to thefirst edge 109-1 of the second device 112. The inner molding 113 mayextend from the second edge 109-2 of the second device 112 to the firstedge 107-1 of the third device 114. The inner molding 113 may extendfrom the second edge 107-2 to the second molding edge 131-2. The firstmolding edge 131-1 and the second molding edge 131-2 may include any ofthe features explained with reference to the molding edge 131 of FIG.1A.

FIG. 2A illustrates a stack packaging structure 200 for an image sensordevice 202 according to an aspect. FIG. 2B illustrates a stack packagingstructure 250 for the image sensor device 202 according to anotheraspect. The stack packaging structure 200 of FIG. 2A uses an under-fillmaterial 206 for an inner molding 213. The stack packaging structure 200of FIG. 2B using an epoxy material 239 for the inner molding 213.

The stack packaging structure 200 may include any one or more of thefeatures discussed with reference to FIGS. 1A through 1C. Referring toFIGS. 2A and 2B, the image sensor device 202 includes an image sensordie having an array of pixel elements configured to convert light intoelectrical signals. In some examples, the image sensor device 202includes a complementary metal-oxide semiconductor (CMOS) image sensor.The image sensor device 202 has a first surface 224 and a second surface226. The first surface 224 defines an active region 201 of the imagesensor device 202. The active region 201 includes a pixel area (e.g.,the pixel array) configured to receive light.

The stack packaging structure 200 includes a transparent member 208coupled to the image sensor device 202 such that the transparent member208 is positioned over (and spaced apart from) the active region 201 ofthe image sensor device 202. In some examples, the transparent member208 includes a cover. In some examples, the transparent member 208includes a lid. In some examples, the transparent member 208 includes aglass material. The transparent member 208 includes a first surface 228,and a second surface 230. The transparent member 208 is positioned awayfrom the image sensor device 202 in a direction A1 such that a space 203(e.g., empty space) exists between the second surface 230 of thetransparent member 208 and the first surface 224 of the image sensordevice 202. In some examples, the stack packaging structure 200 includesdam members 205 that position the transparent member 208 away from theactive region 201 of the image sensor device 202. For example, the dammembers 205 are coupled to the second surface 230 of the transparentmember 208 and to the first surface 224 of the image sensor device 202(at areas apart from the active region 201), where the active region 201is disposed between adjacent dam members 205.

The stack packaging structure 200 includes a substrate 204. Thesubstrate 204 includes a printed circuit board (PCB) substrate. In someexamples, the substrate 204 includes a dielectric material. In someexamples, the substrate 204 includes a single layer of PCB basematerial. In some examples, the substrate 204 includes multiple layersof PCB base material. The substrate 204 includes a first surface 216 anda second surface 218. In some examples, the substrate 204 includes oneor more conductive layer portions 232 (e.g., electrical traces) disposedon the first surface 216 of the substrate 204 (and/or embedded withinthe substrate 204), and/or one or more conductive layer portions 232(e.g., electrical traces) disposed on the second surface 218 of thesubstrate 204 (and/or embedded within the substrate 204). The electricaltraces may include any of the characteristics discussed herein. Thefirst surface 216 of the substrate 204 is disposed in a plane A4. Adirection A1 is aligned perpendicular to the plane A4, and a directionA2 is perpendicular to the direction A1. A direction A3 into the page(shown as a dot) is aligned parallel to the plane A4 and is orthogonalto directions A1 and A2. The directions A1, A2, and A3, and plane A4,are used throughout several of the various views of the implementationsdescribed throughout the figures for simplicity.

The stack packaging structure 200 includes a first device 210 coupled tothe first surface 216 of the substrate 204. In some examples, the firstdevice 210 is coupled to the first surface 216 of the substrate 204 in aflip-chip configuration. In some examples, the first device 210 iscoupled to the first surface 216 of the substrate 204 using one or morebump members 245. In some examples, the bump members 245 include pillarsand/or bumps. In some examples, the bump members 245 include copperpillars with solder, gold plated bumps, solder bumps, and/or gold studbumps. The first device 210 may include a first surface 234 and a secondsurface 236. The bump members 245 may extend from the second surface 236to the first surface 216 of the substrate 204. In some examples, anunder-fill material 258 is disposed between the second surface 236 ofthe first device 210 and the first surface 216 of the substrate 204,where the under-fill material 258 encapsulates the bump members 245(e.g., underlying the first device 210). In some examples, theunder-fill material 258 includes an epoxy resin material.

The image sensor device 202 has a first dimension (e.g., length orwidth) that is defined by a distance between edges 241 of the imagesensor device 202. In some examples, the first device 210 has a seconddimension (e.g., length or width) that is defined by a distance betweenedges 211 of the first device 210. In some examples, the seconddimension is less than the first dimension.

The first device 210 may include an integrated circuit die. In someexamples, the first device 210 includes an image signal processor (ISP)integrated circuit (IC) die. In some examples, the first device 210includes a memory IC die. In some examples, the first device 210includes a driver IC die. The image sensor device 202 may be coupled tothe first device 210. In some examples, an adhesive layer 227 (e.g., adie attach film) is disposed between the second surface 226 of the imagesensor device 202 and the first surface 234 of the first device 210. Insome examples, the image sensor device 202 is communicatively connectedto the substrate 204 using bond wires 221. The bond wires 221 may beconnected to the first surface 224 of the image sensor device 202 andthe first surface 216 of the substrate 204. The bond wires 221 may be aconductive (e.g., metal) wire such as aluminum, copper, or gold, or anycombination thereof, for example.

The stack packaging structure 200 may include a plurality of conductivecomponents 251 coupled to the second surface 218 of the substrate 204.In some examples, the conductive components 251 are surface-mountpackaging elements. In some examples, the conductive components 251include solder balls. The conductive components 251 are components usedto connect to an external device (e.g., a ball grid array (BGA) device).However, the conductive components 251 may include other types ofsurface-mount packaging elements.

The inner molding 213 is disposed between the image sensor device 202and the substrate 204. Referring to FIG. 2A, the inner molding 213includes an under-fill material 206. In some examples, the under-fillmaterial 206 includes an epoxy resin. In some examples, the under-fillmaterial 206 is the same material as the under-fill material 258. Insome examples, the under-fill material 206 is a different type ofunder-fill material than the under-fill material 258. Referring to FIG.2B, the inner molding 213 includes an epoxy material 239. The epoxymaterial 239 may be the same material as the material for an outermolding 215. In some examples, the epoxy material 239 is a differenttype of epoxy material than the material for the outer molding 215.

The inner molding 213 may be disposed between the second surface 226 ofthe image sensor device 202 and the adhesive layer 227. In someexamples, the inner molding 213 may be disposed between the adhesivelayer 227 and the first surface 216 of the substrate 204. The innermolding 213 may encapsulate the first device 210. The inner molding 213may extend along an edge 211 of the first device 210 in the direction A1between the adhesive layer 227 and the first surface 216 of thesubstrate 204. The inner molding 213 may extend to a molding edge 231along a direction A2. The molding edge 231 may define a location ofwhere the inner molding 213 ends along the direction A2. In someexamples, the molding edge 231 may be disposed at a location between anedge 241 of the image sensor device 202 and an edge 253 of the substrate204. In some examples, the molding edge 231 may be disposed at alocation between the edge 241 of the image sensor device 202 and theedge 211 of the first device 210. In some examples, the molding edge 231tapers towards the image sensor device 202. In some examples, themolding edge 231 is linear. In some examples, the molding edge 231includes one or more bent or curved portions.

The outer molding 215 that encapsulates the bond wires 221 (and theconnections to the first surface 216 of the substrate 204 and the imagesensor device 202). The outer molding 215 may be disposed on the firstsurface 216 of the substrate 204. The outer molding 215 may extend alongthe molding edge 231 of the inner molding 213, the edge 241 of imagesensor device 202, the dam members 205, and/or an edge 261 of thetransparent member 208. In some examples, the entirely of the outersurface (e.g., the entire molding edge 231) of the inner molding 213 isin contact with the outer molding 215. In some examples, the outermolding 215 is disposed on a portion of the first surface 224 of theimage sensor device 202. The outer molding 215 may extend from one ormore of the edges (e.g., 231, 241, 261) in the direction A2. In someexamples, the outer molding 215 defines a first molding edge 223 thatdefines an end of the outer molding 215 in the direction A2. In someexamples, the first molding edge 223 is linear. In some examples, thefirst molding edge 223 includes one or more angled or curved portions.In some examples, at least a portion of the first molding edge 223 (orall of the first molding edge 223) is aligned with the direction A1. Insome examples, the first molding edge 223 is disposed at an angle withrespect to the direction A2. In some examples, at least a portion of thefirst molding edge 223 (or all of the first molding edge 223) is alignedwith the edge 253 of the substrate 204. In some examples, the firstmolding edge 223 is disposed at a location between the edge 253 of thesubstrate and the molding edge 231 of the inner molding 213.

The outer molding 215 may define a second molding edge 225. The secondmolding edge 225 may extend from the first molding edge 223 to the edge261 of the transparent member 208. In some examples, the second moldingedge 225 is disposed at a non-zero angle with respect to the firstmolding edge 223 such that the outer molding 215 is tapered from thefirst surface of the transparent member 208. In some examples, thesecond molding edge 225 is disposed perpendicular to the first moldingedge 223. In some examples, the second molding edge 225 is linear. Insome examples, the second molding edge 225 includes one or more bent orcured portions.

The outer molding 215 includes one or more types of material (e.g., in amolding compound if including multiple types of materials) such as ametal, a plastic, a resin, an epoxy, a phenolic hardener, a silicamaterial, a pigment, a glass, a ceramic casing, and/or so forth. In someexamples, the outer molding 215 includes one or more materials differentthan a material of the inner molding 213. In some examples, the outermolding 215 includes one or more materials that is/are the same as thematerial of the inner molding 213. In some examples, the outer molding215 has a different shape than the inner molding 213. In some examples,in the vertical stack direction (e.g., along the direction A1), theouter molding 215 has a thickness greater than a thickness of the innermolding 213. For example, in the direction A1, the inner molding 213extends from the first surface 216 of the substrate 204 to the adhesivelayer 227 below the image sensor device 202. In the direction A1, theouter molding 215 extends from the first surface 216 of the substrate204 to the first surface 228 of the transparent member 208, the secondsurface 230 of the transparent member 208, a location between the firstsurface 228 and the second surface 230, or a location above the firstsurface 228 of the transparent member 208.

FIG. 3 illustrates a stack packaging structure 300 for an image sensordevice 302 according to another aspect. The stack packaging structure300 may include any of the features discussed with reference to FIGS.1A, 1B, 1C, and 2. The stack packaging structure 300 includes the imagesensor device 302, a transparent member 308, dam members 305, bond wires321, an adhesive layer 327, a first device 310, a second device 312,conductive components 351, an inner molding 313, and an outer molding315. A second surface 318 of the substrate 304 is coupled to theconductive components 351. These components may include any of thefeatures described with reference to the previous figures.

The first device 310 is coupled to a first surface 316 of the substrate304, and the second device 312 is coupled to the first surface 316 ofthe substrate 304. In some examples, the second device 312 is coupled tothe first surface 316 of the substrate 304 in a flip-chip configuration.In some examples, the second device 312 is coupled to the first surface316 of the substrate 304 using one or more bump members 345 (e.g.,bumps, pillars, etc.). In some examples, an under-fill material 358 isdisposed between the second device 312 and the first surface 316 of thesubstrate 304, where the under-fill material 358 encapsulates the bumpmembers 345 (e.g., underlying the second device 112).

The adhesive layer 327 is disposed on the first device 310 and thesecond device 312. The inner molding 313 may encapsulate the firstdevice 310 and the second device 312. For example, the inner molding 313may be disposed between the adhesive layer 327 and the first surface 316of the substrate 304. The inner molding 313 may extend from a first edge311-1 of the first device 310 to a first molding edge 331-1. The innermolding 313 may extend between a second edge 311-2 of the first device310 to a first edge 309-1 of the second device 312. The inner molding313 may extend from a second edge 309-2 to a second molding edge 331-1of the inner molding 313.

FIG. 4 illustrates a stack packaging structure 400 for an image sensordevice 402 according to another aspect. The stack packaging structure400 may include any of the features discussed with reference to FIGS.1A, 1B, 1C, 2, and 3. The stack packaging structure 400 includes theimage sensor device 402, a transparent member 408, dam members 405, bondwires 421, an adhesive layer 427, a first device 410, a second device412, conductive components 451 coupled to a second surface 418 of thesubstrate 404, an inner molding 413, and an outer molding 415. Thesecomponents may include any of the features described with reference tothe previous figures.

The first device 410 is coupled to the first surface 416 of thesubstrate 404, the second device 412 is coupled to the first surface 416of the substrate 404, and the third device 414 is coupled to the firstsurface 416 of the substrate 404. In some examples, the third device 414is coupled to the first surface 416 of the substrate 404 in a flip-chipconfiguration. In some examples, the third device 414 is coupled to thefirst surface 416 of the substrate 404 using one or more bump members445 (e.g., bumps, pillars, etc.). In some examples, an under-fillmaterial 458 is disposed between the third device 414 and the firstsurface 416 of the substrate 404, where the under-fill material 458encapsulates the bump members 445. The adhesive layer 427 is disposed ona surface of the first device 410, a surface of the second device 412,and a surface of the third device 414.

The inner molding 413 may encapsulate the first device 410, the seconddevice 412, and the third device 414. For example, the inner molding 413may be disposed between the image sensor device 402 and the adhesivelayer 427. The inner molding 413 may extend from a first edge 411-1 ofthe first device 410 to the first molding edge 431-1. The inner molding413 may extend between a second edge 411-2 of the first device 410 to afirst edge 409-1 of the second device 412. The inner molding 413 mayextend from a second edge 409-2 of the second device 412 to the firstedge 407-1 of the third device 414. The inner molding 413 may extendfrom the second edge 407-2 to the second molding edge 431-2.

FIG. 5 depicts a flowchart 500 having example operations for assemblinga stack packaging structure according to an aspect. Although theflowchart 500 of FIG. 5 illustrates operations in sequential order, itwill be appreciated that this is merely an example, and that additionalor alternative operations may be included. Further, operations of FIG. 5and related operations may be executed in a different order than thatshown, or in a parallel or overlapping fashion. In some examples, theflowchart 500 depicts example operations for assembling the stackpackaging structure when the inner molding is an epoxy material similaror the same as the epoxy material used for the outer molding. Althoughthe flowchart 500 of FIG. 5 is explained with reference to the stackpackaging structure 300 of FIG. 3, the flowchart 500 may be applicableto other stack packaging structures that use an epoxy material similaror the same as the epoxy material used for the outer molding.

In operation 502, the substrate 304 is provided. In operation 504, thefirst device 310 and the second device 312 are coupled to the firstsurface 316 of the substrate 304 via the bump members 345. For example,the first device 310 and the second device 312 are coupled to thesubstrate 304 in a flip-chip configuration. In operation 506, theunder-fill material 358 is disposed under the first device 310 and thesecond device 312 such that the under-fill material 358 encapsulates thebump members 345. In operation 508, the inner molding 313 is disposed onthe substrate 304, and surrounds the first device 310 and the seconddevice 312. In operation 510, the adhesive layer 327 is disposed on thefirst device 310 and the second device 312, and the image sensor device302 is disposed on the adhesive layer 327. Also, the bond wires 321 areconnected to the image sensor device 302 and the substrate 304. Inoperation 512, the transparent member 308 is coupled to the image sensordevice 302 using the dam members 305. In operation 514, the outermolding 315 is disposed on the substrate 304, and the conductivecomponents 351 are coupled to the second surface 218 of the substrate304.

FIG. 6 depicts a flowchart 600 having example operations for assemblinga stack packaging structure according to an aspect. Although theflowchart 600 of FIG. 6 illustrates operations in sequential order, itwill be appreciated that this is merely an example, and that additionalor alternative operations may be included. Further, operations of FIG. 6and related operations may be executed in a different order than thatshown, or in a parallel or overlapping fashion. In some examples, theflowchart 600 depicts example operations for assembling the stackpackaging structure when the inner molding is an under-fill materialthat is similar or the same as the under-fill material used under thedevices. Although the flowchart 600 of FIG. 6 is explained withreference to the stack packaging structure 300 of FIG. 3, the flowchart600 may be applicable to other stack packaging structures that use anunder-fill material for the inner molding.

In operation 602, the substrate 304 is provided. In operation 604, thefirst device 310 and the second device 312 are coupled to the firstsurface 316 of the substrate 304 in a flip-chip configuration. Forexample, the first device 310 and the second device 312 are coupled tothe first surface 316 of the substrate 304 using the bump members 345.In operation 606, the under-fill material 358 is disposed under thefirst device 310 and the second device 312 to encapsulate the bumpmembers 345. In operation 608, the adhesive layer 327 is disposed on thefirst device 310 and the second device 312, and the image sensor device302 is disposed on the adhesive layer 327. In operation 610, the innermolding 313 is applied between the substrate 304 and the image sensordevice 302 to encapsulate the first device 310 and the second device312. In some examples, the inner molding 313 includes a liquid epoxyresin that is thermally cured. In operation 612, the bond wires 321 areconnected to the image sensor device 302 and the substrate 304. Inoperation 614, the transparent member 308 is coupled to the image sensordevice 302 using the dam members 305. In operation 616, the outermolding 315 is applied to the structure to cover the bond wires 321 andat least a portion of an edge of the transparent member 308, and theconductive components 351 are coupled to the second surface 318 of thesubstrate.

FIG. 7 depicts a flowchart 700 having example operations for assemblinga stack packaging structure according to an aspect. Although theflowchart 700 of FIG. 7 illustrates operations in sequential order, itwill be appreciated that this is merely an example, and that additionalor alternative operations may be included. Further, operations of FIG. 7and related operations may be executed in a different order than thatshown, or in a parallel or overlapping fashion. In some examples, theflowchart 700 depicts example operations for any of the stack packagingstructures when the inner molding includes a molding material that issimilar or the same as the outer molding.

Operation 702 includes coupling a device to a substrate in a flip-chipconfiguration. Operation 704 includes applying an inner molding to coverthe device. Operation 706 includes coupling an image sensor device tothe inner molding. Operation 708 includes connecting at least one bondwire to the image sensor device and the substrate. Operation 710includes coupling a transparent member to the image sensor device.Operation 712 includes applying an outer molding to cover the at leastone bond wire and an edge portion of the transparent member.

FIG. 8 depicts a flowchart 800 having example operations for assemblinga stack packaging structure according to an aspect. Although theflowchart 800 of FIG. 8 illustrates operations in sequential order, itwill be appreciated that this is merely an example, and that additionalor alternative operations may be included. Further, operations of FIG. 8and related operations may be executed in a different order than thatshown, or in a parallel or overlapping fashion. In some examples, theflowchart 800 depicts example operations for any of the stack packagingstructures when the inner molding includes an under-fill material.

Operation 802 includes coupling a device to a substrate in a flip-chipconfiguration. Operation 804 includes coupling an image sensor device tothe device. Operation 806 includes applying an inner molding between thesubstrate and the image sensor device. Operation 808 includes connectingat least one bond wire to the image sensor device and the substrate.Operation 810 includes coupling a transparent member to the image sensordevice. Operation 812 includes applying an outer molding to cover the atleast one bond wire and an edge portion of the transparent member.

It will be understood that, in the foregoing description, when anelement is referred to as being connected to, electrically connected to,coupled to, or electrically coupled to another element, it may bedirectly connected or coupled to the other element, or one or moreintervening elements may be present. In contrast, when an element isreferred to as being directly connected to or directly coupled toanother element, there are no intervening elements. Although the termsdirectly connected to, or directly coupled to may not be used throughoutthe detailed description, elements that are shown as being directlyconnected or directly coupled can be referred to as such. The claims ofthe application, if any, may be amended to recite exemplaryrelationships described in the specification or shown in the figures.Implementations of the various techniques described herein may beimplemented in (e.g., included in) digital electronic circuitry, or incomputer hardware, firmware, software, or in combinations of them.Portions of methods also may be performed by, and an apparatus may beimplemented as, special purpose logic circuitry, e.g., an FPGA (fieldprogrammable gate array) or an ASIC (application specific integratedcircuit).

Some implementations may be implemented using various semiconductorprocessing and/or packaging techniques. Some implementations may beimplemented using various types of semiconductor processing techniquesassociated with semiconductor substrates including, but not limited to,for example, Silicon (Si), Gallium Arsenide (GaAs), Gallium Nitride(GaN), Silicon Carbide (SiC) and/or so forth.

While certain features of the described implementations have beenillustrated as described herein, many modifications, substitutions,changes and equivalents will now occur to those skilled in the art. Itis, therefore, to be understood that the appended claims are intended tocover all such modifications and changes as fall within the scope of theembodiments. It should be understood that they have been presented byway of example only, not limitation, and various changes in form anddetails may be made. Any portion of the apparatus and/or methodsdescribed herein may be combined in any combination, except mutuallyexclusive combinations. The embodiments described herein can includevarious combinations and/or subcombinations of the functions, componentsand/or features of the different embodiments described.

1. A semiconductor package comprising: a substrate; a semiconductordevice coupled to a surface of the substrate; an image sensor devicecoupled to the semiconductor device, the semiconductor device beingdisposed between the surface of the substrate and the image sensordevice; a transparent member coupled to the image sensor device; atleast one bond wire connected to the image sensor device and the surfaceof the substrate; an inner molding disposed between the surface of thesubstrate and the image sensor device, the semiconductor device beingencapsulated within the inner molding; and an outer molding disposed onthe surface of the substrate, the at least one bond wire beingencapsulated within the outer molding, the outer molding being coupledto the transparent member.
 2. The semiconductor package of claim 1,wherein the outer molding includes a material that is different than amaterial of the inner molding.
 3. The semiconductor package of claim 1,wherein the outer molding includes a material that is the same as amaterial of the inner molding.
 4. The semiconductor package of claim 1,wherein the semiconductor device is coupled to the surface of thesubstrate using bump members, the bump members being at least partiallydisposed within an under-fill material, the inner molding having amaterial that is the same as the under-fill material.
 5. Thesemiconductor package of claim 1, wherein the inner molding includes anepoxy material.
 6. The semiconductor package of claim 1, furthercomprising: an adhesive layer disposed between the image sensor deviceand the semiconductor device.
 7. The semiconductor package of claim 1,wherein the semiconductor device is a first semiconductor device, thesemiconductor package further comprising: a second semiconductor devicecoupled to the surface of the substrate, the second semiconductor devicebeing encapsulated within the inner molding; and a third semiconductordevice coupled to the surface of the substrate, the third semiconductordevice being encapsulated within the inner molding.
 8. (canceled)
 9. Thesemiconductor package of claim 1, wherein the transparent member iscoupled to the image sensor device via a first dam member and a seconddam member such that an empty space exists between an active region ofthe image sensor device and the transparent member, the first and seconddam members including an adhesive material.
 10. The semiconductorpackage of claim 9, wherein the outer molding extends along an edge ofthe inner molding, an edge of the image sensor device, an edge of thefirst dam member, and a first portion of edge of the transparent member,the outer molding not covering a second portion of the edge of thetransparent member.
 11. The semiconductor package of claim 1, whereinthe semiconductor device includes an image signal processor (ISP)integrated circuit (IC) die.
 12. The semiconductor package of claim 1,wherein the surface of the substrate is a first surface, the substrateincluding a second surface opposite to the first surface, the substrateincluding conductive traces on the first and second surfaces of thesubstrate, the semiconductor package further including: a plurality ofsolder balls coupled to the second surface of the substrate, theplurality of solder balls configured to connect to an external device.13. A semiconductor package comprising: a substrate; a firstsemiconductor device coupled to a surface of the substrate; a secondsemiconductor device coupled to the surface of the substrate; an imagesensor device disposed on the first semiconductor device and the secondsemiconductor device; a transparent member coupled to the image sensordevice; an inner molding disposed between the surface of the substrateand the image sensor device, the first semiconductor device and thesecond semiconductor device being encapsulated within the inner molding;and an outer molding disposed on the surface of the substrate, the outermolding extending along an edge of the inner molding and an edge of theimage sensor device, the outer molding being coupled to the transparentmember.
 14. The semiconductor package of claim 13, wherein the firstsemiconductor device is coupled to the surface of the substrate usingbump members, the bump members being at least partially disposed withinan under-fill material, the inner molding having a material that is thesame as the under-fill material.
 15. The semiconductor package of claim13, wherein the inner molding includes an epoxy material.
 16. Thesemiconductor package of claim 13, wherein the second semiconductordevice includes a driver integrated circuit (IC) die, the semiconductorpackage further comprising: a third semiconductor device coupled to thesurface of the substrate, the third semiconductor device beingencapsulated within the inner molding, the third semiconductor deviceincluding a memory IC die.
 17. The semiconductor package of claim 13,further comprising: at least one bond wire connected to the image sensordevice and the surface of the substrate.
 18. (canceled)
 19. A method ofassembling a semiconductor package, the method comprising: coupling asemiconductor device to a substrate in a flip-chip configuration;applying an inner molding to cover the semiconductor device; coupling animage sensor device to the inner molding; connecting at least one bondwire to the image sensor device and the substrate; coupling atransparent member to the image sensor device; applying an outer moldingto cover the at least one bond wire and at least a portion of an edge ofthe transparent member, the transparent member having an outer surfaceexposed outside of the outer molding.
 20. A method of assembling asemiconductor package, the method comprising: coupling a semiconductordevice to a substrate in a flip-chip configuration; coupling an imagesensor device to the semiconductor device; applying an inner moldingbetween the substrate and the image sensor device; connecting at leastone bond wire to the image sensor device and the substrate; coupling atransparent member to the image sensor device; applying an outer moldingto cover the at least one bond wire and at least a portion of an edge ofthe transparent member, the transparent member having an outer surfaceexposed outside of the outer molding.
 21. The semiconductor package ofclaim 1, wherein the transparent member has an outer surface exposedoutside of the outer molding.
 22. The semiconductor package of claim 13,wherein the transparent member has an outer surface exposed outside ofthe outer molding.